硅基光电子材料平台核心工艺参数数据集

该数据集主要面向硅基光电子材料生长及设计的研究需求建设，基于中国科学院半导体研究所MBE、UHVCVD、MOCVD设备以及国家纳米科学中心的CVD生长和剥离设备产生，主要记录了2020年12月至2024年11月期间的研究结果，包括3个文件夹。数据总量127.7MB。 1.1-硅基Ge材料穿透位错密度中共有8个文件，主要是硅基Ge材料的外延和测试等数据，数据量3.39MB。 1.2-硅基InAs材料穿透位错密度中共有4个文件，主要是硅基InAs InAsSb材料的外延和测试等数据，数据量934KB。 结题测试大纲及核心工艺第3方测试报告中有2个文件，数据量7.40MB。 GeSnPb/Ge的TEM照片中共有19个文件，数据量116MB。This dataset was constructed to meet the research needs of silicon-based optoelectronic material growth and design. It was generated using equipment from the Institute of Semiconductors, Chinese Academy of Sciences, including MBE, UHVCVD, and MOCVD systems, as well as CVD growth and exfoliation equipment from the National Center for Nanoscience and Technology. The dataset primarily records research results from December 2020 to November 2024, and comprises 3 folders with a total data volume of 127.7 MB. 1.1 Threading Dislocation Density of Silicon-based Ge Materials: A total of 8 files are included, mainly containing data related to the epitaxy and testing of silicon-based Ge materials, with a data size of 3.39 MB. 1.2 Threading Dislocation Density of Silicon-based InAs Materials: A total of 4 files are included, mainly containing data on epitaxy and testing of silicon-based InAs and InAsSb materials, with a data volume of 934 KB. Final Test Outline and Third-party Test Report on Core Processes: A total of 2 files are included, with a data volume of 7.40 MB. TEM Images of GeSnPb/Ge: A total of 19 files are included, with a data volume of 116 MB.

搜集汇总

背景与挑战

背景概述

该数据集面向硅基光电子材料生长与设计研究，基于MBE、UHVCVD、MOCVD和CVD设备，记录了2020年12月至2024年11月期间的工艺参数，包括硅基Ge和InAs材料的穿透位错密度数据及TEM照片。数据总量为127.7MB，包含35个文件，格式涵盖jpg、TIF、pdf等。