Database of doping in 4H silicon carbide.docx
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Formation-energy diagrams of impurities: Fig. S1~Fig. S58; Solubility of impurities as a function of temperature:Fig. S59~Fig. S114; Lattice distortion of 4H-SiC induced by doping. The dopant-induced lattice distortion is determined by the volume change after and before doping in 4H-SiC: Table S1; The solubility of impurities in 4H-SiC at 300, 600, 1800 and 2400 K: Table S2; Charge transition levels of impurities in 4H-SiC: Table S3.
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2022-12-30
