Emulation of Heavy-Ion-Induced Single Event Effects in Integrated Circuits Using Focused Pulsed X-rays
收藏ESRF Portal2028-01-01 更新2026-04-23 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-2188880318
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资源简介：
The goal of the proposed experiment is to investigate in which conditions focused pulsed X-rays could emulate heavy ions for Single Event Upset (SEU), Burst (huge amount of simultaneous SEUs), Single Event Latchup (SEL) or Single Event Burnout (SEB) characterization/selection of CMOS/biCMOS integrated circuits (IC) and power devices.
提供机构：
ESRF, 71 avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France; TRAD, Ingenierie, 907 voie l'occitane, 31670 Labege, France; Centre National d'Etudes Spaciales, AQ/EC, 18, Avenue Edouard BELIN, 31401 Toulouse 9, France
创建时间：
2028-01-01
