Data from: Terahertz sensing based on the nonlinear electrodynamics of the two-dimensional correlated topological semimetal TaIrTe4

The development of terahertz (THz) sensing technologies is limited by the
lack of sensitive, broadband, and fast terahertz detectors. Thermal
bolometers are bulky and slow, whereas electronic terahertz detectors
(such as Schottky diodes) are fast, but their sensitivity degrades quickly
outside a narrow frequency window. Here, we show that a two-dimensional
correlated topological semimetal, tantalum iridium telluride (TaIrTe4),
has a large room temperature nonlinear Hall effect, and that the
interaction between this effect and terahertz nonlinear electrodynamics
can be used as a mechanism for terahertz sensing. Our photodetectors
exhibit a high sensitivity (noise equivalent power of around 1 pW Hz-1/2)
and a large zero-bias responsivity (around 0.3 A W-1) a broadband spectral
range (0.1–10 THz) at room temperature with intrinsic ultrafast response
time (around ps). The zero-bias responsivity and noise equivalent power
performance can be further improved (to 18 A W-1 and 0.05 pW Hz-1/2,
respectively) by introducing gate-tunable electron correlations.