Current-voltage characteristics of ZnO/Co3O4/Si photodetector

The text files contain data regarding the current-voltage characteristics of photodetectors comprised of a zinc oxide (ZnO) layer, a cobalt oxide (Co3O4) layer, and a silicon (Si) substrate. The thickness of the layers is as follows: 70 nm for ZnO, 15 nm for Co3O4, and 200 µm for Si. The sample was annealed at 400°C for 30 minutes. The bottom electrode of the device was made of aluminum, while the top contact consisted of tin indium oxide (ITO).

During the measurement, the samples were illuminated with a laser, with the wavelength specified in the filename. Additionally, measurements without illumination were conducted for reference. The filenames include 'PD1' to 'PD5,' denoting power density, with the respective values being PD1 = 251 mW/cm², PD2 = 89 mW/cm², PD4 = 21.5 mW/cm², and PD5 = 9.35 mW/cm².