Milestone 2 hBN/SLG device fabrication at the wafer scale
收藏NIAID Data Ecosystem2026-05-02 收录
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https://zenodo.org/record/5497757
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资源简介：
The growth at the wafer-scale h-BN was obtained in Deliverable 1.3. We then transferred SLG ontop of hBN films to test whether the hBN provided an enhancement in graphene's mobility. This milestone reports the fabrication and characterization of Hall Bar devices with single layer graphene (SLG) and hexagonal boron nitride (hBN) heterostructures at the 4’’/100mm wafer level.
创建时间：
2024-07-17
