MOCVD1
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The MOCVD1 system includes a cold wall horizontal metalorganic chemical vapor deposition (MOCVD) reactor from CVD Equipment Corp. with an inductively heated SiC-coated graphite susceptor that can accommodate a single wafer up to 2 inches in diameter at temperatures up to 1000 °C. Water circulation through the outer quartz jacket maintains a constant wall temperature. To increase uniformity across the wafer, gas foil rotation of the wafer holder is employed. The reactor loads and unloads through a nitrogen-purged glovebox to minimize exposure to ambient air. The system includes a welded stainless steel gas panel with metal gasket seal fittings, pneumatic valves, mass flow controllers, pressure controllers, etc. that are operated remotely via custom LabView software. Six bubbler manifolds are available for solid or liquid precursors and gas source lines are available for hydrogen selenide and hydrogen sulfide. A separate connection is available for chloride precursors. Purified hydrogen and nitrogen are available as process gases. A chemically resistant rotary vane pump, capacitance manometer, Pirani gauge, throttle valve controller and additional valves are used to maintain reactor pressures in the range from 10-700 Torr.The MOCVD reactor and gas panel are housed in a ventilated enclosure. The gas sources are housed within ventilated gas cabinets and are connected to the main system enclosure via double-walled tubing. An exhaust gas scrubber that includes a pyrolysis stage and a packed tower with sodium hydroxide neutralization system is available to treat the reactor effluents to safe limits. A 16-point Honeywell Vertex M chemcassette system is used to monitor for toxic gases at various points on the system and throughout the lab. The MOCVD system is interlocked with the gas detection unit and other sensors to enable safe shutdown in the event of equipment failure.
MOCVD1系统包含一台来自CVD Equipment Corp.的冷壁式卧式金属有机化学气相沉积（MOCVD）反应器，该反应器配备感应加热型碳化硅涂层石墨承片托盘，可容纳直径最大2英寸的单片晶圆，最高工作温度可达1000℃。通过外部石英夹套的水循环可维持反应器壁温恒定。为提升晶圆表面沉积均匀性，系统采用晶圆夹具的气体箔片旋转技术。反应器通过氮气吹扫手套箱进行上下料，以最大程度减少与外界空气的接触。系统配备焊接式不锈钢气路面板，带有金属垫片密封接头、气动阀门、质量流量控制器、压力控制器等组件，可通过定制化LabView软件实现远程操控。系统设有6路鼓泡器歧管，用于输送固态或液态前驱体；同时配备硒化氢与硫化氢气源管路，额外设有独立接口用于输送氯化物前驱体。系统可使用纯化氢气与氮气作为工艺气体。此外，系统搭载耐化学腐蚀旋片真空泵、电容式压力计、皮拉尼真空计、节流阀控制器及额外阀门，可将反应器压强维持在10~700托的范围内。MOCVD反应器与气路面板均安装在通风机柜内。各气源组件安装在通风式气柜内，并通过双层管路与系统主机柜相连。系统配备尾气洗涤装置，包含热解段与搭载氢氧化钠中和系统的填料塔，可将反应器尾气处理至安全排放限值以内。系统搭载16通道霍尼韦尔（Honeywell）Vertex M型化学盒式监测系统，可在设备各点位及整个实验室范围内监测有毒气体。该MOCVD系统与气体检测单元及其他传感器联锁，可在设备发生故障时触发安全停机。
