Potential profile, design parameters and thermal properties of asymmetric double-barrier heterostructures based on AlGaAs simulated with NEGF+H

This is a repository for assymmetric double barrier heterostructures that were simulated using the NEGF coupled with the heat equation described in BESCOND:Phys. Rev. Applied:2020. Relation between the csv columns and variables: Column Variable Definition 1 Lb1 [nm] First barrier length 2 LQW [nm] Quantum well length 3 Lb2 [nm] Second barrier length 4 γ Fraction on Al in AlGaAs alloy 5 V [V] Bias between emitter and collector 6 CP [W/m²] Cooling power 7 Te [K] Electron temperature in the Quantum well 8 W1 [eV] First activation energy 9 W2 [eV] Second activation energy 10-1525 PP [eV] Potential profile These data was used to feed the machine learning workflow shared in https://gitlab.citius.usc.es/modev/coolML, and published in FERNANDEZ:Scientific Reports:2024 This work was supported by the Spanish MICINN/AEI, Xunta de Galicia, and FEDER Funds under Grant RYC-2017-23312, Grant PID2019-104834GB-I00, Grant PID2022-141623NB-I00, Grant PID2022-142709OB-C21/PID2022-142709OA-C22, Grant ED431F 2020/008, Grant ED431C 2022/16 and GELATO ANR project (ANR-21-CE50-0017).