Two-Dimensional van der Waals Hafnium Disulfide and Zirconium Oxide-based Micro-Interdigitated Electrodes Transistors

—Indelible challenges facing to control the transistor action and realization of emerging two-dimensional van der Waals multi-layer (2Dml) field-effect transistors (FETs), to post-silicon technology era. For scalability, a cost-effective large area ultrafine thin films interface and band alignment of multi-layer channel material with compatible gate dielectric are essential. Here, 2Dml Hafnium disulfide and Zirconium oxide are employed as channel material and gate dielectric, respectively, and anticipated that van der Waals interaction of said structures entail the high-quality interface with trivial dangling bonds and defects caused by lattice mismatch. The investigated Al/ZrO2/HfS2/Alµ-IDE, FETs exhibit the subthreshold swing (SS) ~ 65 mV/dec, ION/IOFF ratio of ~104, transconductance of ~3.99 µS, effective mobility of ~74 cm2/Vs at Vgs of 2 V and leakage current density of ~33.8 nA/cm2 at Vgs of -1 V. Thus, the steep SS, sturdy current saturation, low-voltage operation (~3 V) and leakage current establishing the potential candidature of HfS2 and ZrO2 based 2D-FETs for both conventional and ubiquitous electronics.