Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy
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资源简介：
Sawicka, Marta, 2024, "Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy", https://doi.org/10.18150/OTQNBS, RepOD, V1
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RepOD创建时间：
2024-03-26
