宽带射频功率放大器功能性能测试和可靠性试验数据集
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射频功率放大器是磁共振成像（MRI, magnetic resonance imaging）系统中的关键组成部件，其任务是将谱仪产生的一定频率的窄带射频信号放大到较大的功率，再通过发射线圈辐射出去，用以激发人体组织样本内的氢原子，使氢原子发生不同角度的翻转，从而使接受线圈在恢复稳态的过程中接受需要的磁共振信号。不同原子核的旋磁比不相同, 在相同的静磁场强度下核磁共振频率不同, 同时为兼容不同静磁场强度的核磁共振系统, 要求用于核磁共振波谱仪的射频功率放大器覆盖一定的频带宽度。在MRI过程中，射频信号需要放大到几百至几千瓦，这样的功率输出对电路设计和散热的要求比较高。传统窄带放大器已无法满足超高场科研平台对多核素（如1H、19F、31P）波谱研究、高级脉冲序列及并行发射技术的宽带化、可重构化需求。特别是在PET-MR同步采集模式下，射频放大器的任何电磁泄漏与噪声干扰都会严重劣化PET的定量精度，成为制约其性能发挥的技术瓶颈。 为此，本课题根据核磁共振设备应用场景,聚焦于宽带高功率放大器的设计与工程实现。利用第三代半导体功率器件输出功率密度大、状态稳定、可靠性高及射频端口匹配能力强等优势，开展超宽带、高线性度、高动态范围等特性的宽带射频功率放大器研制，研究内容包括射频宽带大功率合成技术、宽带幅度均衡技术、热学仿真设计等。通过以上研究提高宽带功率放大器应用性能，研制满足需求的宽带射频功率放大器并形成有效的制造方法。 基于以上述研究，本数据集记录了以第三代半导体—GaN超宽带射频功率管为核心，采用混合集成工艺，结合大功率、宽频带固态功放设计理念，工作频段覆盖100MHz至402MHz，输出功率超过2kW的宽带射频功率放大器的功能性能测试数据和可靠性试验数据，为同类产品设计提供验证基准。
Radio frequency (RF) power amplifiers are critical components in magnetic resonance imaging (MRI) systems. Their core function is to amplify narrowband RF signals of specific frequencies generated by the spectrometer to a high power level, then radiate the signals through the transmit coil to excite hydrogen atoms in human tissue samples, causing the hydrogen atoms to flip at various angles. This enables the receive coil to capture the desired magnetic resonance signals during the recovery process to steady state. Different atomic nuclei have distinct gyromagnetic ratios, leading to different nuclear magnetic resonance (NMR) frequencies under the same static magnetic field strength. To be compatible with NMR systems of varying static magnetic field strengths, RF power amplifiers for NMR spectrometers are required to cover a certain bandwidth. During MRI procedures, RF signals need to be amplified to hundreds to thousands of watts; such high power output imposes strict requirements on circuit design and heat dissipation. Traditional narrowband amplifiers can no longer meet the broadband and reconfigurable requirements of ultra-high-field research platforms for multi-nuclide (e.g., ¹H, ¹⁹F, ³¹P) spectroscopy research, advanced pulse sequences, and parallel transmission technology. Particularly in simultaneous PET-MR acquisition mode, any electromagnetic leakage or noise interference from RF amplifiers will severely degrade the quantitative accuracy of PET, becoming a technical bottleneck restricting the performance of the system. To address these issues, this study focuses on the design and engineering implementation of broadband high-power amplifiers based on the application scenarios of NMR equipment. Leveraging the advantages of third-generation semiconductor power devices, including high output power density, stable operating state, high reliability, and strong RF port matching capability, we developed broadband RF power amplifiers with ultra-wide bandwidth, high linearity, and high dynamic range. The research contents include RF broadband high-power combining technology, broadband amplitude equalization technology, and thermal simulation design. Through these studies, we aim to improve the application performance of broadband power amplifiers, develop a broadband RF power amplifier that meets the requirements, and establish an effective manufacturing method. Based on the above research, this dataset records the functional performance test data and reliability test data of a broadband RF power amplifier, which uses third-generation semiconductor—gallium nitride (GaN) ultra-wideband RF power transistors as the core, adopts hybrid integrated technology, and incorporates the design concept of high-power, wide-bandwidth solid-state power amplifiers. The amplifier has an operating frequency range of 100 MHz to 402 MHz and an output power exceeding 2 kW, providing a validation benchmark for the design of similar products.
