Source data for "High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K"

Data for Fig.2 and Fig.3 of the paper "High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K".<br>Fig 2. Measured (a) effective thermal conductivity, κ_eff, (b) effective electrical conductivity, σ_eff, and (c) Seebeck coefficient, S, of various porous SiNWs as a function of temperature. For the legend, the first number represents SiNW porosity, the middle one is boron doping concentration (p) measured using secondary ion mass spectrometry (SIMS, see Methods), and the last number is SiNW diameter. Note κ_eff and σ_eff are extracted based on nanowire diameter without normalizing with porosity. (d) Calculated thermoelectric figure of merit ZT for the three samples with porosity = 46% and p = 2.2×10²⁰ cm^-3 (152 nm, 171 nm, 184 nm) with the highest ZT in this work, where the previously measured ZT results of single rough SiNW, thin SiNW array, polycrystalline Si nanotube mesh, holey Si, nanobulk Si and bulk Si (8.1×10¹⁹ cm^-3 boron-doped) are plotted for comparison.<br>Fig 3. (a) Black square represents the ratio of porous SiNW κ (porosity = 46% and p = 2.2×10²⁰ cm^-3, 171 nm) to that of optimally doped bulk Si (8.1×10¹⁹ cm^-3 boron-doped) as a function of temperature. Green squares show the ratio of power factor of porous SiNW (porosity = 46% and p = 2.2×10²⁰ cm^-3, 171 nm) to that of the optimally doped bulk Si (8.1×10¹⁹ cm^-3 boron-doped). (b-d) Comparison between the measured temperature-dependent (b) κ, (c) σ, and (d) S with modeled results considering the effects of pore boundary scattering. Note that in panel (b) for the porosity = 46% and p = 2.2×10²⁰ cm^-3 sample, charge carriers make a non-negligible contribution to thermal transport, and the modeled κ is the sum of the calculated lattice thermal conductivity and electronic thermal conductivity, κ_e, estimated using the Wiedemann–Franz law.