device parameter
收藏IEEE2020-04-25 更新2026-04-17 收录
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https://ieee-dataport.org/documents/device-parameter
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With PCF scattering applied to the I-V curve calculation, the low-field electron mobility , the low-field RS and RD corresponding to different gate biases are calculated and obtained, the detailed calculation for these parameters can be referenced in Cui et al[6,8], and the values of these parameters for sample 1 and sample 2 are shown in TABLE II and TABLE III, respectively. From TABLE II and TABLE III, it is shown that the low-field RS and RD corresponding to different gate biases for sample 1 and sample 2 are less varied, the reason is that the ratio of the gate length to the source-drain spacing for the both samples are small, the influence of PCF scattering on the RS and RD is weak.
提供机构：
Lin, Zhaojun
创建时间：
2020-04-25
