In-situ annealing of thin films
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资源简介：
The goal of this proposal is to measure how thin films crystallize epitaxially on a monocrystalline substrate as they are annealed. To do so, we will use a furnace designed by Sample Environment and previously used in ID28 with controlled temperature and atmosphere. The range of temperatures studied will be RT-900 deg C with a constant flow of synthetic air. The measurement will be done by GIWAXS with the Pilatus detector.
创建时间：
2028-01-01
