Trifluoromethyltriphenodioxazine: Air-Stable and High-Performance n-Type Semiconductor
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Two trifluoromethyltriphenodioxazines were efficiently synthesized as active materials for n-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Air-stable and high-performance thin film transistors based on the two compounds were fabricated.
创建时间:
2008-07-17



