This dataset contains webpage access snapshots, application notes, and datasheets, which serve as references to the named article. Each entry is named beginning with the reference number with which it
We demonstrate a gate-dielectric engineering approach leveraging an ultrathin, atomic-layer-deposited silicon oxide interfacial layer (SiL) between the amorphous oxide semiconductor (AOS) channel and
Global Electrically Erasable Read Only Memory Market Report 2024 comes with the extensive industry analysis of development components, patterns, flows and sizes. The report also calculates present and