Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides

Name: Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides
Creator: Institute of High Pressure Physics
Published: 2024-12-10T15:47:43+08:00

RepOD Repository for Open Data2024-12-10 更新2026-07-23 收录

半导体高压物理

III-V氮化物材料研究

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/VKIQYI 数据链接链接失效反馈

官方服务：

资源简介：

Staszczak, Grzegorz, 2024, "Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides", https://doi.org/10.18150/VKIQYI, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2024-12-10