GaAs/GaInP nano-ridges: strain relaxation for III-V integration on Si wafers
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https://b2find.eudat.eu/dataset/65691c3c-a679-5661-a439-d7f253058d89
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The proposed experiment focuses on studying strain relaxation and defect formation in GaAs/InGaP and GaAs/InGaAs nano-ridge (NR) structures grown on Si wafers using μLaue...
