GaAs/GaInP nano-ridges: strain relaxation for III-V integration on Si wafers

The proposed experiment focuses on studying strain relaxation and defect formation in GaAs/InGaP and GaAs/InGaAs nano-ridge (NR) structures grown on Si wafers using μLaue...本研究提出的实验聚焦于利用微劳厄（μLaue）技术，对在硅晶圆上外延生长的GaAs/InGaP与GaAs/InGaAs纳米脊（NR）结构中的应变弛豫与缺陷形成过程展开研究。