In-operando strain mapping of electrically pumped GeSn micro-ring lasers
收藏ESRF Portal2027-01-01 更新2026-04-23 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-1743605258
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资源简介：
We propose to employ in-operando Scanning X-ray Diffraction Microscopy (SXDM) to investigate the impact of the heat generated during their operation on the active layer lattice in electrically-pumped micro ring laser devices based on epitaxial GeSn/SiGeSn heterostructures. Our main goal is to follow, with time and spatial resolution, how the strain tensor of the epitaxial layer stack evolves under the heat generation/propagation processes occurring during the laser device operation.
提供机构：
University of Stuttgart,Institute of Semiconductor Engineering,Pfaffenwaldring 47,70569 STUTTGART,GERMANY,70569,STUTTGART,GERMANY; Forschungszentrum Juelich GmbH,Peter Gruenberg Institute 9,Wilhelm-Johnen-Straße,Forschungszentrum Jülich GmbH Jülich,52428 JUELICH,52428,JUELICH,GERMANY; IHP Microelectronics,15236 FRANKFURT/ODER,GERMANY,15236,FRANKFURT/ODER,GERMANY
创建时间：
2027-01-01
