Data underlying the publication: Electric-field control of zero-dimensional topological states in ultranarrow germanene nanoribbons

This is a data set for the article: 'Electric-field control of zero-dimensional topological states in ultranarrow germanene nanoribbons'. This data set includes the data for all the experimental figures of the main text as well as the supplementary material, that is measured by the PIN research group at the University of Twente. The article is written in collaboration with the Institute for Theoretical Physics from Utrecht University, who have uploaded the codes necessary to compute all theoretical figures on their own data server. Below is the abstract for the article:<br>Reversible, all-electric control of symmetry-protected zero-dimensional modes has been a longstandinggoal. In buckled honeycomb lattices, a perpendicular field couples to the staggered sublatticepotential providing the required handle. We combine scanning tunneling microscopy andtight-binding theory to switch zero-dimensional topological end states reversibly on and o! in ultranarrowgermanene nanoribbons by tuning the electric field in the tunnel junction. Increasing the fieldswitches o! the end modes of topological two-hexagon wide ribbons, while the same field switches onzero-dimensional states in initially trivial three- and four-hexagon wide ribbons. This atomic scaleplatform realizes a proof-of-principle for a zero-dimensional topological field e!ect device, openinga path for ultrasmall memory, controllable qubits, and neuromorphic architectures.

本数据集配套于题为《电场调控超窄锗烯纳米带中的零维拓扑态》（Electric-field control of zero-dimensional topological states in ultranarrow germanene nanoribbons）的学术论文。本数据集包含主文本所有实验插图及补充材料对应的实验数据，相关实验由特温特大学 (University of Twente) PIN研究团队完成。本论文由乌得勒支大学理论物理研究所 (Institute for Theoretical Physics, Utrecht University) 合作完成，该研究所已将用于自主生成所有理论插图所需的计算代码上传至其自有数据服务器。以下为该论文的摘要：对称性保护的零维模式的全电学可逆调控，是学界长期以来的核心研究目标。在褶皱蜂窝晶格中，垂直电场可与交错子晶格势耦合，从而提供可行的调控途径。我们结合扫描隧道显微镜（scanning tunneling microscopy, STM）与紧束缚理论，通过调控隧道结内的电场，实现了超窄锗烯纳米带中零维拓扑末端态的可逆启闭。增大电场可关闭拓扑双六边形宽纳米带的末端模式，而同一电场则可激活原本为平庸态的三、四六边形宽纳米带中的零维拓扑态。这一原子级平台为零维拓扑场效应器件提供了原理性验证，为超小型存储器、可控量子比特（qubit）及神经形态架构的研发开辟了全新路径。