RADNEXT: TA09-289: Muon-Induced Events in Dynamic Operation

Muons are expected to be a serious concern in advanced technologies. In the literature, there are several reports of muon-induced single events in SRAMs, mainly focusing on the technology node, dependence on the bias voltage, difference between muons and antimuons (hereafter, negative and positive muons), etc. However, radiation tests are usually performed in static mode, just writing a pattern, irradiating, and reading back. This procedure is quite simple but it is not representative of actual operation of the SRAMs. Indeed, no report has been found in the literature relating muons and dynamic tests on these memories.

In this proposal we would like to characterize commercial CMOS 40-nm SRAMs under muons while typical dynamic tests, such as March-C or March-D, are run. For other kinds of radiation, the sensitivity increases and other less common phenomena can occur. It is possible that similar results appear with muons, but they should be investigated.