Electrothermal Cosimulation Model of SiC MOSFET Considering Dynamic Switching Behavior

The electrothermal coupling effects of the high-power-density Silicon Carbide (SiC) devices should be considered to improve the accuracy of predicting the dynamic temperature fields. In this study, a co-simulation model incorporating dynamic switching behaviors is proposed to establish the electrothermal bidirectional coupling for SiC MOSFETs through a Matlab\/ANSYS co-simulation framework. The static conduction and dynamic switching power losses are determined in the electrical behavioral model, and then they are mapped to the finite element thermal analysis module in the methodology. The electrical parameters are iteratively updated via real-time junction temperature feedback.