X-ray Beam Induced Current Mapping with a new Lock In Amplifier
收藏DataCite Commons2026-02-12 更新2026-05-03 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-2331196551
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资源简介：
We will attempt to measure X-ray Beam Induced Current (XBIC) with the Lock-In Amplifier from ID16B, where it is frequently used for this technique. We aim to observe the correlation between electrical and structural changes in (Al)GaN Si High Electron Mobility Transistors, where both have been observed separately, but not been successfully correlated so far. This will aid in establishing the XBIC technique for the ID01 user mode
提供机构：
European Synchrotron Radiation Facility
创建时间：
2026-02-12
