Data for: "A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content"

This data is the result of cathodoluminescence hyperspectral imaging and wavelength-dispersive X-ray spectroscopy measurements carried out on a set of Si-doped AlₓGa₁₋ₓN epilayers, grown at the Tyndall Institute using different AlGaN crystal orientations and Si incorporation. Further analysis and interpretation of this data is presented in the associated journal article, and figure numbers referred to in the data correspond to those used in this paper: "A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content" by L. Spasevski et al (2020), Journal of Physics D: Applied Physics. DOI: 10.1088/1361-6463/abbc95