Reactivity of Sulfur Molecules on MoO3 (010) Surface

Two-dimensional and layered MoS2 is a promising candidate for next-generation electric devices due to its unique electronic, optical, and chemical properties. Chemical vapor deposition (CVD) is the most effective way to synthesize MoS2 monolayer on a target substrate. During CVD synthesis, sulfidation of MoO3 surface is a critical reaction step, which converts MoO3 to MoS2. However, initial reaction steps for the sulfidation of MoO3 remain to be fully understood. Here, we report first-principles quantum molecular dynamics (QMD) simulations for the initiation dynamics of sulfidation of MoO3 (010) surface using S2 and S8 molecules. We found that S2 molecule is much more reactive on the MoO3 surface than S8 molecule. Furthermore, our QMD simulations revealed that a surface O-vacancy on the MoO3 surface makes the sulfidation process preferable kinetically and thermodynamically. Our work clarifies an essential role of surface defects to initiate and accelerate the reaction of MoO3 and gas-phase sulfur precursors for CVD synthesis of MoS2 layers.