Ultrafast high-endurance memory based on sliding ferroelectrics

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area-efficient and energy-efficient electronics, especially in emerging nonvolatile memory technology. In this study, we investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a novel form of atomically thin two-dimensional ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 1011 switching cycles, comparable to state-of-the-art FeFET devices. These superior characteristics highlight the potential of two-dimensional sliding ferroelectrics for inspiring next-generation nonvolatile memory techno..., The data was collected by MATLAB code. The resistance Rxx was normalized by the geometric factor., , # Ultrafast high-endurance memory based on sliding ferroelectrics

[https://doi.org/10.5061/dryad.1jwstqk3c](https://doi.org/10.5061/dryad.1jwstqk3c)

Numerical data was used for generating the plot in the paper.

Fig. 1c: 
VB_up (V): The back gate voltage swept in the increasing direction.
Rxx_up (kOhm): The resistance of the sample while back gate voltage is swept in the increasing direction.
VB_down (V): The back gate voltage swept in the decreasing direction.
Rxx_down (kOhm): The resistance of the sample while back gate voltage is swept in the decreasing direction.

Fig. 2a: 
pulse_ampl (V): The voltage of the pulse we applied to the sample after initialization.
pulse_len (ns): The width of the pulse we applied to the sample after initialization.
Rxx (kOhm): The resistance of the sample after the application of voltage pulse.

Fig. 2b: 
pulse_ampl (V): The voltage of the pulse we applied to the sample after initialization.
pulse_len (ns): The width of the pulse we applied to the sam...