Noise power spectral density and IV characteristic for p-type organic field effect transistor fabricated on flexible substrate

Low frequency noise (LFN) affects the stability, sensitivity and reliability of organic field effect transistors (OFETs). It is extensively explored in recent years. Out of various noise sources such as shot noise, thermal noise, generation-recombination noise, flicker noise or 1\/f noise is the dominant reason for LFN in organic transistors. It can either be originated due to bulk or surface phenomenon which create carrier number fluctuation. We characterize and analyze flicker noise of p-type OFETs, printed on flexible substrates. The noise in OFETs originates as a result of both mobility fluctuation and carrier number fluctuation. It is also observed that the method to extract the threshold voltage influences the identification of the dominant noise source. A benchmark analysis of noise Power spectral density (PSD) with other similar technologies is also reported. With the noise PSD of 10-5 - 10-7 at 10 Hz, the reported noise for device in this publication is consistent with other similar transistor technologies.