Imaging the Full strain tensor around through-silicon vias: a pioneer study of the complementarity between µLaue and DFXM

Through-Si vias TSVs, an elegant interconnection technique in 3D integrated microelectronics, allow for efficient use of space, providing electrical paths between layers while improving signal propagation and reducing power consumption. These elements introduce mechanical stress in the silicon, which can affect the reliability and performance of the device. Although significant research has been dedicated to understanding and mitigating the deformation fields surrounding the TSVs, here we propose a new approach to characterizing the strain field reach around the TSVs and delimiting the "keep-out-zones" with a strain resolution of 10-5, in a non destructive manner and providing a full strain tensor. Since TSVs are a well known system this will serve a proof of concept for a dual quantitative strain characterization method based on two state of the art synchrotron X ray diffraction techniques: Laue Microdiffraction and Dark field X ray microscopy.