A dataset of ferroelectricity-tuned Upconversion Luminescence in Yb3+/Er3+-Doped Bi4Ti3O12 Thin Films for Information Photonics Applications

Structural CharacterizationXRD raw data (Fig. 1B-C): 2θ-intensity values for Bi₃.₉₋ₓYbₓEr₀.₁Ti₃O₁₂ films (x = 0.1–1.0)EDS quantitative results (Fig. 1D): Atomic percentages of Bi/Ti/Yb/ErSEM/TEM images (Fig. 1E-F): High-resolution originals of surface/cross-section morphology (TIFF/PNG format)Functional Property MeasurementsFerroelectric hysteresis loops (Fig. 2C, 3A-B): P-E curves (electric field vs. polarization) and *I-E* current curvesUpconversion luminescence (UCL) spectra (Fig. 2A, 4B): Wavelength-intensity data under 980 nm excitation (0–30 V)Real-time UCL modulation (Fig. 4C): Time-resolved intensity at 545 nm under square-wave voltagesDevice Performance DataSignal encoding datasets (Fig. 5):Voltage input sequences for "UCAS" ASCII conversionCorresponding UCL enhancement rates (ΔR) at 545 nmLogic gate operation (Fig. 6):Truth tables for "AND" gate (electrical/optical inputs vs. normalized UCL output)Time-synchronized dynamic response curves