The effect of proton irradiation on GaN HEMT
收藏DataCite Commons2025-04-27 更新2025-05-18 收录
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资源简介：
Proton irradiation can cause degradation of the electrical characteristics of GaN HEMT devices. Proton irradiation experiments were conducted to obtain the influence of different energies and doses of protons on the electrical characteristics of GaN HEMT devices
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Science Data Bank
创建时间：
2024-09-09
