Investigation of the uniformity of TeO2:Eu layer

TeO2 doped by Eu thin films manufactured by magnetron sputtering method were measured by XPS method. Te-Eu mosaic target with diameter of 50.8 mm was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the deposition chamber was below 0.2 Pa and substrate was heated at 200 oC during deposition. The distance between sputtered targets and the Corning 1737 glass substrate was about 10 cm. Uniformity of the film was measured by XPS method with Ar ion gun etching. For analysis etching for 2, 4, 6 and 8 minutes was performed. Results showed good uniformity of film.