Si/SiGe heterostructure characterization for Qubit optimization

High and uniform valley-splitting of electron energy levels in Silicon/Silicon Germanium (Si/SiGe) heterostructures is one of the dominant limiting factors to scale up silicon-based quantum processors. Here, we propose a study of the strain and surface/interface sharpness homogeneity in a Si/SiGe heterostructure as a function of the thermal budget required to make quantum dots and Hall-bar structures. The correlation in between these metrics and the valley-splitting of electrons hosted in this heterostructure will be investigated. We will thus combine the unique strain mapping qualities of ID01 proven in earlier studies in such thin layers with our capacities of probing all relevant functional aspects required for the realization of Si Qubits. This study will provide deeper understanding of the material characteristics impact on the electron properties and enables the optimization of heterostructure for quantum computing hardware.