Atomic Layer Deposition Processes of Rare-Earth-Based Thin Films

This ORKG comparison is derived from Table 3 of the review Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements by Ghazy, Zanders, Devi, and Karppinen (Adv. Mater. Interfaces, 2024, https://doi.org/10.1002/admi.202400274). It compiles reported ALD processes for thin films containing rare-earth elements (R³⁺), linking each material system to its precursor chemistry (metal precursor(s), co-reactant(s)), growth per cycle (GPC), deposition temperature, and references. By structuring this information in machine-actionable form, the comparison enables systematic exploration of precursor families, process windows, and material outcomes across binary, ternary, and quaternary rare-earth compounds. It supports queries such as “Which ALD processes achieve high GPC at ≤ 250 °C?” or “How do plasma-enhanced vs. thermal ALD processes compare for Y₂O₃ films?”.