SEB Step Current Characteristic of GaN HEMTs
收藏科学数据银行2025-11-20 更新2026-04-23 收录
下载链接：
https://www.scidb.cn/detail?dataSetId=9e267cd15425405bad33094210b82780
下载链接
链接失效反馈官方服务：
资源简介：
Single-event burnout (SEB) experiments conducted on enhancement-mode GaN HEMTs, together with current measurements using a Keysight 34461A digital multimeter, revealed a new “step current” SEB characteristic, which provides a basis for studying the characteristic behavior of SEB phenomena.
提供机构：
中国科学院国家空间科学中心; Ziyu Wang
创建时间：
2025-11-20
