Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel

The presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg) of the top-gated GFET device. 
In this study the GFET device with 10 μm x 10 μm graphene channel, 10 nm top-gate dielectric and 300 nm SiO2 layer was analyzed. The drift-diffusion approach was employed to calculate self-consistently the I-V behavior of the transistor at initial temperature of 293K. The mobility of the both type of carriers (electrons and holes) was 3000 cm2/(V*s) and the Dirac voltage was 0 V.