Investigation of Current Voltage Characteristics of Irradiated Vanadium Dioxide (VO2)

The goal of this experiment is to obtain information regarding the stochastic behavior of VO2’s insulating and metallic domain formation as a stimulus, current, is applied. By analyzing the 1D spatial maps collected in this experiment, we will be able to understand the metallic domain relaxation process as a function of current. This local nanoscale structure information will then be compared to the global resistive state of devices. We expect to see nanoscale filaments, formed by metallic puddles, connect the two metal leads as a result of the voltage pulses. Our collaborators intend to utilize these characteristics to fabricate neuromorphic and synapse-like devices for computational purposes.