An inventory dataset of GeSe/WSe2 mixed dimensional p-n junction

Novel 2D/layered semiconductor materials with graphene-like structure show great potential for development and application in next-generation optoelectronic devices due to many unique and excellent physical and structural properties. The researches of heterojunction devices with different combinations of 2D materials are fundamental and necessary to advance the development of photodetection. In this work, GeSe/WSe2 mixed-dimension p-n heterojunction devices consisting of WSe2 2D materials (n-type) and GeSe films (p-type) are prepared. Important photoelectronic parameters of the p-n heterojunction, such as photoresponsivity, specific detectivity and epitaxial quantum efficiency have been obtained.  This dataset includes: (1) the Atomic Force Microscope test data of the WSe2 and GeSe in the heterojunction; (2) Raman spectra and PL spectra data of the WSe2 and GeSe; (3) the photoelectric test data, including the I-V characteristic curve, data on the evolution of photoresponsivity as a function of laser excitation power density, and data on the optical switching behavior. The results show the development potential of GeSe/WSe2 mixed dimensional p-n heterojunctions for optoelectronic applications, which provide material parameters and new ideas for the study of heterojunction based on 2D materials.