In-Situ mapping of structural aging in high-power GaN-on-Si devices
收藏B2FIND2026-04-28 收录
官方服务：
资源简介：
We propose to employ Scanning X-ray diffraction microscopy (SXDM), to investigate the spatial strain distribution in functional high-power transistors based on epitaxial GaN...
我们提出采用扫描X射线衍射显微镜（Scanning X-ray Diffraction Microscopy，SXDM），对基于外延氮化镓（epitaxial GaN）的功能性大功率晶体管的空间应变分布展开研究……
