Influence of the hBN dielectric layers on the quantum transport properties of MoS2 transistors.
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资源简介：
An ab initio study of the coupled electrons and phonon transport properties of MoS2-hBN devices. A comparison of the device characteristics when hBN is treated as a perfectly insulating, non vibrating layer and one where it is included in the DFT together with MoS2.
提供机构：
Materials Cloud创建时间：
2021-12-08
