Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise
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https://figshare.shef.ac.uk/articles/dataset/Data_for_paper_Thin_Al1-xGaxAs0_56Sb0_44_diodes_with_low_excess_noise/5155822
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The files correspond to experimental results in paper: "<b>Thin Al</b><sub>1-<i>x</i></sub><b>Ga</b><i><sub>x</sub></i><b>As</b><sub>0.56</sub><b>Sb</b><sub>0.44</sub><b> diodes with low excess noise"</b> published in IEEE Journal of Selected Topics in Quantum Electronics (Volume: 24, Issue: 2, March-April 2018), DOI: https://doi.org/10.1109/JSTQE.2017.2725441<br>There are two types of files:- .png, which correspond to the figures- .csv, which are raw data in figures<br>This work reports the excess noise characterization in a series of Al<sub>1-<i>x</i></sub>Ga<i><sub>x</sub></i>As<sub>0.56</sub>Sb<sub>0.44</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.<br>The data consists of results from Al<sub>1-<i>x</i></sub>Ga<i><sub>x</sub></i>As<sub>0.56</sub>Sb<sub>0.44</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.
提供机构：
The University of Sheffield
创建时间：
2017-06-29
