Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

Pt/TiOx/Pt resistive switching (RS) devices are considered to be amongst the best candidates for post-flash non-volatile memory (NVM) and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible resistive random access memory (RRAM) technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiOx/Pt stack onto flexible Parylene-C substrates. The devices were electrically characterized, exhibiting both digital and analog memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in implantable sensors and bio-compatible neural interfaces.
Data for the paper by of the same name published in
Nanotechnology, Volume 28, Number 2 doi:10.1088/1361-6528/28/2/025303