Multislice Electron Ptychography 4D-STEM dataset for poly-Si (Thermal cycle impact on polycrystalline silicon: Direct observation of electrical properties degradation and interfacial nanocrystalline grain defects, Fig. 7)

A 4D-STEM dataset acquired by Chenglin Pua for polycrystalline silicon sample, where 3D multiple twinning could be observed along the depth section. Reconstructed result please see slides
Fold_slice used for MEP reconstruction
Voltage: 300kV
Beam current: 10pA
Semi convergence angle: 24.3 mrad
Camera length: 2cm
Scanstep: 0.5 angstrom
Dwell time: 3ms
Real space sampling: 100*200
Reciprocal space sampling: 256*256 (bin to 128*128 for MEP reconstruction)
Rotation angle: 180+50.5°

Experimental defocus: +30nm
Calibrated MEP defocus: +28nm
MEP reconstruction thickness: 66nm

The datasets were collected using the JEOL JEM-ARM300F2 Grand ARM™2 microscope, equipped with Cs correctors and a Gatan K3 camera at Tsinghua University, without energy filtering

If you use this dataset, please cite this article:
Qiaoqiao Kang et al. Thermal cycle impact on polycrystalline silicon: Direct observation of electrical properties degradation and interfacial nanocrystalline grain defects, Nano Research.