Monocrystalline GaN diluted with up to 7% arsenic grown by MOVPE

Name: Monocrystalline GaN diluted with up to 7% arsenic grown by MOVPE
Creator: Łukasiewicz Research Network – PORT Polish Center for Technology Development
Published: 2025-08-12T13:42:40+08:00

RepOD Repository for Open Data2025-08-12 更新2026-07-23 收录

GaN:As合金生长

MOVPE外延工艺

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/PRPTI8 数据链接链接失效反馈

官方服务：

资源简介：

Olszewski, Wojciech, 2025, "Monocrystalline GaN diluted with up to 7% arsenic grown by MOVPE", https://doi.org/10.18150/PRPTI8, RepOD, V1

提供机构：

Łukasiewicz Research Network – PORT Polish Center for Technology Development

创建时间：

2025-08-12

Monocrystalline GaN diluted with up to 7% arsenic grown by MOVPE

资源简介：

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