3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination

This file contains current vs optical power and voltage vs current measurement data of GaN micro-LEDs fabricated by the neutral beam etching technique. It also contains the result of a cathode luminescence mapping of the emission wavelength of a 3.5-micron micro-LED mesa etched by the neutral beam etching technique