Memristive Nanowires-based Devices as Synthetic Neuron in Silicon
收藏IEEE2026-04-17 收录
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(a) Non-crossing loop of the volatile memristor underDC sweep (b) Dynamic behavior of the memristor before andafter switching under constant 1 V input. (c) Dynamic cyclesof the memristor under constant 4 V input.
提供机构：
Junrui Chen
