Synthesis parameters of GaMnSb thin films.
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Report of values of remnant magnetization (Mr), coercive field (Hc), charge carrier density (np), Anomalous Hall Coefficient (Rs), crystallite size (τ), and EDXS concentration values of elementary composition for a thin film with Ts = 523 K and td = 15 min. The values of the experimental error in parentheses were reported.
创建时间：
2020-04-15
