High temperature reflectivity of SiC//SiC bonding interface

We plan to study the high temperature evolution of a direct bonding interface between Silicon Carbide materials. The bonding is performed using thin silicon layer deposits on the surfaces of SiC. We have demonstrated by ex-situ experiments that a series of transitions occur, including melting and dewetting of the confined silicon film at temperatures around the silicon melting melting temperature (Tm=1410°C) The evolution will be studied using interface reflectivity at medium/high x-ray energy (30keV) and interface scattering. We shall measure the sealing of the gap and the broadening of the interfaces. Crystal scattering will be also followed to monitor the strain in the layers close to the interface.