Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs using 1MeV electrons for Europa-Surface Applications
收藏DataCite Commons2023-07-13 更新2025-04-16 收录
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https://dataverse.jpl.nasa.gov/citation?persistentId=doi:10.48577/jpl.MBSC01
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To support the use of SiGe BiCMOS for future mission targets such as Europa, which are subject to high radiation doses and cryogenic temperatures, SiGe HBTs were exposed to 1-MeV electrons to 5 Mrad(Si) at 300, 200, and 115 K. The presented results are the first in situ characterization of electron irradiation at cryogenic temperatures in SiGe HBTs. Lower temperature was found to improve TID tolerance. Physical mechanisms behind this improved tolerance with cooling are examined, such as trap formation due to particle bombardment and the trapping/de-trapping of carriers at oxide/semiconductor interfaces. The results of the present work demonstrate that SiGe HBTs enjoy improved TID tolerance in addition to higher performance at cryogenic temperatures, supporting the use of SiGe BiCMOS as enabling technology platforms for space missions to harsh environments like Europa. Index Terms—Total Ionizing Dose, Electron Irradiation, SiGe BiCMOS, SiGe HBT, Cryogenic Temperature, Ocean Worlds
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Root
创建时间：
2023-07-09
