Ferroelectric FET Compact Model for Neuromorphic
收藏IEEE2020-03-13 更新2026-04-17 收录
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https://ieee-dataport.org/documents/ferroelectric-fet-compact-model-neuromorphic
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资源简介：
Tri-gate ferroelectric FETs with HZO gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric characteristics. A compact analytical model is developed to accurately capture FET transfer characteristics, including series resistance, coulombic scattering, and vertical field dependent mobility degradation effects, as well as the evolvement of threshold voltage and mobility with ferroelectric polarization switching. The model covers both sub-threshold and strong inversion operation.
提供机构：
National Cheng Kung University
创建时间：
2020-03-13
